{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9754955","patent":{"patent_number":"US-9754955","title":"High-K-last manufacturing process for embedded memory with metal-oxide-nitride-oxide-silicon (MONOS) memory cells","assignee":null,"inventors":[],"filing_date":"2015-12-30T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":19,"abstract":"An integrated circuit (IC) using high-κ metal gate (HKMG) technology with an embedded metal-oxide-nitride-oxide-silicon (MONOS) memory cell is provided. A logic device is arranged on a semiconductor substrate and comprises a logic gate. A memory cell is arranged on the semiconductor substrate and comprises a control transistor and a select transistor laterally adjacent to one another. The control and select transistors respectively comprise a control gate and a select gate, and the control transistor further comprises a charge trapping layer underlying the control gate. The logic gate and one or both of the control and select gates are metal and arranged within respective high κ dielectric layers. A high-κ-last method for manufacturing the IC is also provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High-K-last manufacturing process for embedded memory with metal-oxide-nitride-oxide-silicon (MONOS) memory cells","description":"An integrated circuit (IC) using high-κ metal gate (HKMG) technology with an embedded metal-oxide-nitride-oxide-silicon (MONOS) memory cell is provided. A logic device is arranged on a semiconductor s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9754955","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9754955","citation_suggestion":"Patentable. \"High-K-last manufacturing process for embedded memory with metal-oxide-nitride-oxide-silicon (MONOS) memory cells\" (US-9754955). https://patentable.app/patents/US-9754955","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9754955","json":"https://patentable.app/api/llm-context/US-9754955","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:52:35.432Z"}