{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9754967","patent":{"patent_number":"US-9754967","title":"Structure for integration of an III-V compound semiconductor on SOI","assignee":null,"inventors":[],"filing_date":"2017-01-17T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"A semiconductor-on-insulator (SOI) substrate is provided that includes a silicon or germanium handle substrate that is miscut from 2 degrees to 8 degrees towards the <111> crystallographic direction or the <100> crystallographic direction. The topmost semiconductor layer is removed from a portion of the SOI substrate, and then a trench having a high aspect ratio is formed within the insulator layer of the SOI substrate and along the <111> crystallographic direction or the <100> crystallographic direction. An III-V compound semiconductor pillar, which includes a lower portion that has a first defect density and an upper portion that has a second defect density that is less than the first defect density, is then formed in the trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Structure for integration of an III-V compound semiconductor on SOI","description":"A semiconductor-on-insulator (SOI) substrate is provided that includes a silicon or germanium handle substrate that is miscut from 2 degrees to 8 degrees towards the <111> crystallographic direction o","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9754967","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9754967","citation_suggestion":"Patentable. \"Structure for integration of an III-V compound semiconductor on SOI\" (US-9754967). https://patentable.app/patents/US-9754967","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9754967","json":"https://patentable.app/api/llm-context/US-9754967","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:58:31.971Z"}