{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9755014","patent":{"patent_number":"US-9755014","title":"Semiconductor device with substantially equal impurity concentration JTE regions in a vicinity of a junction depth","assignee":null,"inventors":[],"filing_date":"2016-09-28T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":6,"abstract":"A highly reliable semiconductor device with high withstand voltage is provided. As means therefor, an impurity concentration in a first JTE region is set to 4.4×1017 cm−3 or higher and 6×1017 cm−3 or lower and an impurity concentration in a second JTE region is set to 2×1017 cm−3 or lower in a case of a Schottky diode, and an impurity concentration in the first JTE region is set to 6×1017 cm−3 or higher and 8×1017 cm−3 or lower and an impurity concentration in the second JTE region is set to 2×1017 cm−3 or lower in a case of a junction barrier Schottky diode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with substantially equal impurity concentration JTE regions in a vicinity of a junction depth","description":"A highly reliable semiconductor device with high withstand voltage is provided. As means therefor, an impurity concentration in a first JTE region is set to 4.4×1017 cm−3 or higher and 6×1017 cm−3 or ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9755014","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9755014","citation_suggestion":"Patentable. \"Semiconductor device with substantially equal impurity concentration JTE regions in a vicinity of a junction depth\" (US-9755014). https://patentable.app/patents/US-9755014","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9755014","json":"https://patentable.app/api/llm-context/US-9755014","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:46:22.708Z"}