{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9755016","patent":{"patent_number":"US-9755016","title":"Integration process to form microelectronic or micromechanical structures","assignee":null,"inventors":[],"filing_date":"2016-04-01T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"The invention relates to transferring, in one exposure, a single-mask feature to form two features on an underlying material. Specifically, a doubled walled structure (i.e. a center opening flanked by adjacent openings) is formed. Advantageously, the openings may be sub-resolution openings. The center opening may be a line flanked by two other lines. The center opening may be circular and surrounded by an outer ring, thus forming a double wall ring structure. In an electronic fuse embodiment, the double wall ring structure is a via filled with a conductor that contacts a lower and upper level metal. In deep trench embodiment, the double wall ring structure is a deep trench in a semiconductor substrate filled with insulating material. In such a way the surface area of the trench is increased thereby increasing capacitance."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integration process to form microelectronic or micromechanical structures","description":"The invention relates to transferring, in one exposure, a single-mask feature to form two features on an underlying material. Specifically, a doubled walled structure (i.e. a center opening flanked by","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9755016","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9755016","citation_suggestion":"Patentable. \"Integration process to form microelectronic or micromechanical structures\" (US-9755016). https://patentable.app/patents/US-9755016","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9755016","json":"https://patentable.app/api/llm-context/US-9755016","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:57:55.287Z"}