{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9755037","patent":{"patent_number":"US-9755037","title":"Semiconductor device and method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2014-12-30T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":4,"abstract":"According to a first aspect of the present invention, a method of manufacturing semiconductor device includes the step of preparing a silicon substrate. The silicon substrate includes an N-type silicon layer on one surface and at least one of a PN junction, an electrode film, and a protective film on another surface. The method includes the steps of forming a Si—Ti junction by forming a first electrode film made of titanium on the N-type silicon layer; forming a second electrode film made of Al—Si on the first electrode film; forming a third electrode film made of Ni on the second electrode film; and heating the silicon substrate after forming the third electrode film. A titanium silicide layer is not formed between the N-type silicon layer and the first electrode film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing semiconductor device","description":"According to a first aspect of the present invention, a method of manufacturing semiconductor device includes the step of preparing a silicon substrate. The silicon substrate includes an N-type silico","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9755037","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9755037","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing semiconductor device\" (US-9755037). https://patentable.app/patents/US-9755037","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9755037","json":"https://patentable.app/api/llm-context/US-9755037","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:39:07.777Z"}