{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9755039","patent":{"patent_number":"US-9755039","title":"Semiconductor device having a metal gate electrode stack","assignee":null,"inventors":[],"filing_date":"2011-07-28T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":17,"abstract":"A semiconductor device includes a substrate, a gate dielectric layer on the substrate, and a gate electrode stack on the gate dielectric layer. The gate electrode stack includes a metal filling line, a wetting layer, a metal diffusion blocking layer, and a work function layer. The wetting layer is in contact with a sidewall and a bottom surface of the metal filling line. The metal diffusion blocking layer is in contact with the wetting layer and covers the sidewall and the bottom surface of the metal filling line with the wetting layer therebetween. The work function layer covers the sidewall and the bottom surface of the metal filling line with the wetting layer and the metal diffusion blocking layer therebetween."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having a metal gate electrode stack","description":"A semiconductor device includes a substrate, a gate dielectric layer on the substrate, and a gate electrode stack on the gate dielectric layer. The gate electrode stack includes a metal filling line, ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9755039","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9755039","citation_suggestion":"Patentable. \"Semiconductor device having a metal gate electrode stack\" (US-9755039). https://patentable.app/patents/US-9755039","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9755039","json":"https://patentable.app/api/llm-context/US-9755039","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:55:07.102Z"}