{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9755042","patent":{"patent_number":"US-9755042","title":"Insulated gate semiconductor device and method for manufacturing the insulated gate semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-02-10T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":13,"abstract":"An insulated gate semiconductor device provided herein includes a front electrode and a rear electrode and is configured to switch a conducting path between the front electrode and the rear electrode. The insulated gate semiconductor device includes a first circumferential trench provided in the front surface; a second circumferential trend provided in the front surface and deeper than the first circumferential trench; a fifth region of a second conductivity type exposed on a bottom surface of the first circumferential trench; a sixth region of the second conductivity type exposed on a bottom surface of the second circumferential trench; and a seventh region of a first conductivity type connected to the third region and separating the fifth region from the sixth region. A front side end portion of the sixth region being located on a rear side with respect to a rear side end portion of the fifth region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Insulated gate semiconductor device and method for manufacturing the insulated gate semiconductor device","description":"An insulated gate semiconductor device provided herein includes a front electrode and a rear electrode and is configured to switch a conducting path between the front electrode and the rear electrode.","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9755042","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9755042","citation_suggestion":"Patentable. \"Insulated gate semiconductor device and method for manufacturing the insulated gate semiconductor device\" (US-9755042). https://patentable.app/patents/US-9755042","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9755042","json":"https://patentable.app/api/llm-context/US-9755042","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:39:55.084Z"}