{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9755044","patent":{"patent_number":"US-9755044","title":"Method of manufacturing a transistor with oxidized cap layer","assignee":null,"inventors":[],"filing_date":"2016-06-08T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"A semiconductor device includes a substrate, a channel layer, a spacer layer, a barrier layer, and an oxidized cap layer. The channel layer is disposed on or above the substrate. The spacer layer is disposed on the channel layer. The barrier layer is disposed on the spacer layer. The oxidized cap layer is disposed on the barrier layer. The oxidized cap layer is made of oxynitride."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing a transistor with oxidized cap layer","description":"A semiconductor device includes a substrate, a channel layer, a spacer layer, a barrier layer, and an oxidized cap layer. The channel layer is disposed on or above the substrate. The spacer layer is d","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9755044","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9755044","citation_suggestion":"Patentable. \"Method of manufacturing a transistor with oxidized cap layer\" (US-9755044). https://patentable.app/patents/US-9755044","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9755044","json":"https://patentable.app/api/llm-context/US-9755044","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:37:08.482Z"}