{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9755072","patent":{"patent_number":"US-9755072","title":"High voltage device fabricated using low-voltage processes","assignee":null,"inventors":[],"filing_date":"2016-03-21T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":9,"abstract":"A method for fabricating a high-voltage transistor on a semiconductor substrate includes defining and forming shallow trench isolation regions for all of the transistors, defining and forming well regions for all of the transistors, forming a gate oxide layer in the well regions for all of the transistor, forming gates for all of the transistors over the gate oxide layer, implanting a dopant to form lightly-doped drain regions for all of the transistors, the lightly-doped drain regions for at least drains of the high-voltage transistors being spaced apart from an inner edge of the shallow trench isolation regions, forming gate spacers at sides of the gates of all of the transistors, and implanting a dopant to form sources and drains for all of the transistors, the drains of the high-voltage transistors being formed completely surrounded by the lightly-doped drain regions of the high-voltage transistors."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High voltage device fabricated using low-voltage processes","description":"A method for fabricating a high-voltage transistor on a semiconductor substrate includes defining and forming shallow trench isolation regions for all of the transistors, defining and forming well reg","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9755072","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9755072","citation_suggestion":"Patentable. \"High voltage device fabricated using low-voltage processes\" (US-9755072). https://patentable.app/patents/US-9755072","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9755072","json":"https://patentable.app/api/llm-context/US-9755072","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:37:51.083Z"}