{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9755076","patent":{"patent_number":"US-9755076","title":"Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices","assignee":null,"inventors":[],"filing_date":"2016-12-14T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"Semiconductor devices include a strain-inducing layer capable of applying a strain to a channel region of a transistor included in a miniaturized electronic device, and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate having a channel region; a pair of source/drain regions provided on the substrate and arranged on both sides of the channel region in a first direction; and a gate structure provided on the channel region and comprising a gate electrode pattern extending in a second direction that is different from the first direction, a gate dielectric layer disposed between the channel region and the gate electrode pattern, and a gate spacer covering respective lateral surfaces of the gate electrode pattern and the gate dielectric layer. At least one of the source/drain regions includes a first strain-inducing layer and a second strain-inducing layer. The first strain-inducing layer is disposed between a lateral surface of the channel region and the second strain-inducing layer and contacts at least a portion of the gate dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices","description":"Semiconductor devices include a strain-inducing layer capable of applying a strain to a channel region of a transistor included in a miniaturized electronic device, and a method of manufacturing the s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9755076","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9755076","citation_suggestion":"Patentable. \"Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices\" (US-9755076). https://patentable.app/patents/US-9755076","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9755076","json":"https://patentable.app/api/llm-context/US-9755076","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:58:46.414Z"}