{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9755080","patent":{"patent_number":"US-9755080","title":"Fin field-effect transistor","assignee":null,"inventors":[],"filing_date":"2016-12-05T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":7,"abstract":"A method for fabricating a FinFET structure comprises providing a semiconductor substrate; forming a hard mask layer on the semiconductor substrate; forming a dummy gate structure having a dummy gate, a first sidewall spacer and a second sidewall spacer; removing the dummy gate to form a first trench; forming first sub-fins in the semiconductor substrate under the hard mask layer in the first trench; forming a first metal gate structure in the first trench; removing the first sidewall spacer to form a second trench; forming second sub-fins in the semiconductor substrate under the hard mask layer in the second trench; forming a second metal gate structure in the second trench; removing the second sidewall spacer to form a third trench; forming third sub-fins in the semiconductor substrate under the hard mask layer in the third trench; and forming a third metal gate structure in the third trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fin field-effect transistor","description":"A method for fabricating a FinFET structure comprises providing a semiconductor substrate; forming a hard mask layer on the semiconductor substrate; forming a dummy gate structure having a dummy gate,","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9755080","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9755080","citation_suggestion":"Patentable. \"Fin field-effect transistor\" (US-9755080). https://patentable.app/patents/US-9755080","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9755080","json":"https://patentable.app/api/llm-context/US-9755080","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:55:57.559Z"}