{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9755142","patent":{"patent_number":"US-9755142","title":"Methods of making memory devices with programmable impedance elements and vertically formed access devices","assignee":null,"inventors":[],"filing_date":"2016-05-16T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":9,"abstract":"A method can include forming a plurality of access transistors, including forming second semiconductor regions over an integrated circuit substrate that are doped to a second conductivity type, the second semiconductor regions being over and in contact with first semiconductor regions doped to a first conductivity type, and forming third semiconductor regions doped to the first conductivity type in contact with the second semiconductor regions; forming a plurality of conductive structures, over and in contact with the third semiconductor regions; and forming programmable impedance memory cells over and in contact with the conductive structures."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of making memory devices with programmable impedance elements and vertically formed access devices","description":"A method can include forming a plurality of access transistors, including forming second semiconductor regions over an integrated circuit substrate that are doped to a second conductivity type, the se","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9755142","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9755142","citation_suggestion":"Patentable. \"Methods of making memory devices with programmable impedance elements and vertically formed access devices\" (US-9755142). https://patentable.app/patents/US-9755142","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9755142","json":"https://patentable.app/api/llm-context/US-9755142","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:46:59.598Z"}