{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9758902","patent":{"patent_number":"US-9758902","title":"Method for producing 3C-SiC epitaxial layer, 3C-SiC epitaxial substrate, and semiconductor device","assignee":null,"inventors":[],"filing_date":"2014-10-15T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":2,"abstract":"A 3C-SiC epitaxial layer is produced by a production method including: epitaxially growing a first 3C-SiC layer on a Si substrate; oxidizing the first 3C-SiC layer; removing an oxide film on a surface of the 3C-SiC layer; and epitaxially growing a second 3C-SiC layer on the 3C-SiC layer after the oxide film is removed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for producing 3C-SiC epitaxial layer, 3C-SiC epitaxial substrate, and semiconductor device","description":"A 3C-SiC epitaxial layer is produced by a production method including: epitaxially growing a first 3C-SiC layer on a Si substrate; oxidizing the first 3C-SiC layer; removing an oxide film on a surface","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9758902","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9758902","citation_suggestion":"Patentable. \"Method for producing 3C-SiC epitaxial layer, 3C-SiC epitaxial substrate, and semiconductor device\" (US-9758902). https://patentable.app/patents/US-9758902","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9758902","json":"https://patentable.app/api/llm-context/US-9758902","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:40:32.807Z"}