{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9760010","patent":{"patent_number":"US-9760010","title":"Patterning process","assignee":null,"inventors":[],"filing_date":"2016-06-08T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":11,"abstract":"A pattern is formed by coating a resist composition comprising a fluorine-containing polymer, a base resin, an acid generator, and an organic solvent, baking the composition at 50-300° C. in an atmosphere of a solvent having a boiling point of 60-250° C., exposure, and development. In immersion lithography, the resist film is improved in water repellency and water slip, and LWR after pattern formation is reduced. In EB or EUV lithography, outgassing is suppressed and LWR is reduced."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Patterning process","description":"A pattern is formed by coating a resist composition comprising a fluorine-containing polymer, a base resin, an acid generator, and an organic solvent, baking the composition at 50-300° C. in an atmosp","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9760010","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9760010","citation_suggestion":"Patentable. \"Patterning process\" (US-9760010). https://patentable.app/patents/US-9760010","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9760010","json":"https://patentable.app/api/llm-context/US-9760010","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:38:48.295Z"}