{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9761302","patent":{"patent_number":"US-9761302","title":"Static random access memory cell and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2016-04-06T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":19,"abstract":"A SRAM cell includes a first pass-gate device and a second-pass gate device comprising a first conductivity type, a first pull-down device and a second pull-down device comprising the first conductivity type, and a first pull-up device and a second pull-up device comprising a second conductivity type complementary to the first conductivity type. The first pass-gate device and the second pass-gate device respectively include first lightly-doped drains (hereinafter abbreviated as LDDs. The first pull-down device and the second pull-down device respectively include second LDDs. And a dosage of the first LDDs is different from a dosage of the second LDDs."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Static random access memory cell and manufacturing method thereof","description":"A SRAM cell includes a first pass-gate device and a second-pass gate device comprising a first conductivity type, a first pull-down device and a second pull-down device comprising the first conductivi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9761302","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9761302","citation_suggestion":"Patentable. \"Static random access memory cell and manufacturing method thereof\" (US-9761302). https://patentable.app/patents/US-9761302","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9761302","json":"https://patentable.app/api/llm-context/US-9761302","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:14:55.435Z"}