{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9761314","patent":{"patent_number":"US-9761314","title":"Non-volatile memory devices and methods of operating the same","assignee":null,"inventors":[],"filing_date":"2013-12-02T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":17,"abstract":"A non-volatile memory device includes a semiconductor substrate and a tunnel insulating layer and a gate electrode. A multiple tunnel insulation layer with a plurality of layers, a charge storage insulation layer, and a multiple blocking insulation layer with layers are sequentially stacked between the gate electrode and the tunnel insulating layer. A first diffusion region and a second diffusion region in the semiconductor substrate are adjacent to opposite respective sides of the gate electrode. When a voltage is applied to the gate electrode and the semiconductor substrate to form a voltage level difference therebetween, a minimum field in the tunnel insulation layer is stronger than in the blocking insulation layer. A minimum field at a blocking insulation layer can be stronger than at a tunnel insulation layer, and the migration probability of charges through the tunnel insulation layer can be higher than through the blocking insulation layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Non-volatile memory devices and methods of operating the same","description":"A non-volatile memory device includes a semiconductor substrate and a tunnel insulating layer and a gate electrode. A multiple tunnel insulation layer with a plurality of layers, a charge storage insu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9761314","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9761314","citation_suggestion":"Patentable. \"Non-volatile memory devices and methods of operating the same\" (US-9761314). https://patentable.app/patents/US-9761314","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9761314","json":"https://patentable.app/api/llm-context/US-9761314","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:20:50.780Z"}