{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9761438","patent":{"patent_number":"US-9761438","title":"Method for manufacturing a semiconductor structure having a passivated III-nitride layer","assignee":null,"inventors":[],"filing_date":"2014-05-08T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"A semiconductor structure comprising a layer of a III-N material and at least a portion of said layer being covered by a passivation layer, wherein the passivation layer comprises a first layer of SiN formed on said at least a portion of said III-N material layer and a second layer of SiN formed on said first layer of SiN; the first SiN layer having a first thickness and generating tensile stress in the structure and the second SiN layer having a second thickness and generating compressive stress in the structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing a semiconductor structure having a passivated III-nitride layer","description":"A semiconductor structure comprising a layer of a III-N material and at least a portion of said layer being covered by a passivation layer, wherein the passivation layer comprises a first layer of SiN","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9761438","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9761438","citation_suggestion":"Patentable. \"Method for manufacturing a semiconductor structure having a passivated III-nitride layer\" (US-9761438). https://patentable.app/patents/US-9761438","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9761438","json":"https://patentable.app/api/llm-context/US-9761438","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:38:16.387Z"}