{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9761460","patent":{"patent_number":"US-9761460","title":"Method of fabricating semiconductor structure","assignee":null,"inventors":[],"filing_date":"2016-12-01T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":16,"abstract":"A method of fabricating a semiconductor structure is provided and includes the following steps. A semiconductor substrate including fin structures is provided. Each fin structure is partly located in a first region and partly located in a second region adjoining the first region. A fin remove process is performed for removing the fin structures in the second region. A fin cut process with a fin cut mask is performed for cutting a part of the fin structures in the first region. The fin cut mask includes cut patterns and a compensation pattern. The cut patterns are located corresponding to a part of the fin structures in the first region. The compensation pattern is located corresponding to the second region of the semiconductor substrate. A fin bump is formed in the second region and corresponding to the compensation pattern after the fin cut process and the fin remove process."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of fabricating semiconductor structure","description":"A method of fabricating a semiconductor structure is provided and includes the following steps. A semiconductor substrate including fin structures is provided. Each fin structure is partly located in ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9761460","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9761460","citation_suggestion":"Patentable. \"Method of fabricating semiconductor structure\" (US-9761460). https://patentable.app/patents/US-9761460","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9761460","json":"https://patentable.app/api/llm-context/US-9761460","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:47:43.309Z"}