{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9761480","patent":{"patent_number":"US-9761480","title":"Methods of forming field effect transistor (FET) and non-FET circuit elements on a semiconductor-on-insulator substrate","assignee":null,"inventors":[],"filing_date":"2016-02-18T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":26,"abstract":"One illustrative method disclosed includes forming an isolation structure so as to define first and second active regions on the SOI substrate, forming a field effect transistor above the first active region and forming an opening in the second active region that exposes an upper surface of the bulk semiconductor layer in the second active region. In this example, the method further includes performing a common epitaxial growth process so as to form an epi semiconductor material region above each of the source/drain regions of the transistor and to form a unitary epi semiconductor structure above the second active region, wherein the unitary epi semiconductor structure is formed on and in contact with the exposed upper surface of the bulk semiconductor layer within the opening and on and in contact with an upper surface of the active layer in the second active region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming field effect transistor (FET) and non-FET circuit elements on a semiconductor-on-insulator substrate","description":"One illustrative method disclosed includes forming an isolation structure so as to define first and second active regions on the SOI substrate, forming a field effect transistor above the first active","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9761480","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9761480","citation_suggestion":"Patentable. \"Methods of forming field effect transistor (FET) and non-FET circuit elements on a semiconductor-on-insulator substrate\" (US-9761480). https://patentable.app/patents/US-9761480","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9761480","json":"https://patentable.app/api/llm-context/US-9761480","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:26:06.288Z"}