{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9761483","patent":{"patent_number":"US-9761483","title":"Semiconductor devices, FinFET devices and methods of forming the same","assignee":null,"inventors":[],"filing_date":"2016-03-07T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Semiconductor devices, FinFET devices and methods of forming the same are disclosed. In accordance with some embodiments, a semiconductor device includes a substrate, a first gate stack, a first dielectric layer, a shielding layer and a connector. The first gate stack is over a substrate. The first dielectric layer is aside the first gate stack, wherein the top surface of the first gate stack is lower than the top surface of the first dielectric layer such that a first recess is provided above the first gate stack. The shielding layer is on the surface of the first recess and extends onto the top surface of the first dielectric layer. The connector is through the shielding layer and is electrically connected to the first gate stack."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices, FinFET devices and methods of forming the same","description":"Semiconductor devices, FinFET devices and methods of forming the same are disclosed. In accordance with some embodiments, a semiconductor device includes a substrate, a first gate stack, a first diele","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9761483","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9761483","citation_suggestion":"Patentable. \"Semiconductor devices, FinFET devices and methods of forming the same\" (US-9761483). https://patentable.app/patents/US-9761483","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9761483","json":"https://patentable.app/api/llm-context/US-9761483","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:26:11.737Z"}