{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9761484","patent":{"patent_number":"US-9761484","title":"Interconnect structure and fabrication thereof","assignee":null,"inventors":[],"filing_date":"2016-07-25T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"Interconnect structures and processes generally include creating point defects in exposed surfaces of the dielectric layer to create a point defect region at a relatively shallow depth, wherein the point defect region is a fraction of the dielectric layer and is created with exposure to silicon, carbon, nitrogen, oxygen, or mixtures thereof such that the point defect region contains Si, C, N O, or mixtures containing at least one of the foregoing. A seed layer can be deposited and includes at least one alloying element that is effective to form an in situ self-aligned liner layer with the Si, C, N O, or mixtures containing at least one of the foregoing within the point defect region, which is formed at a depth of less than 10 nanometers. The in situ liner layer within the dielectric layer maximizes the volume fraction of the conductor of the interconnect structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Interconnect structure and fabrication thereof","description":"Interconnect structures and processes generally include creating point defects in exposed surfaces of the dielectric layer to create a point defect region at a relatively shallow depth, wherein the po","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9761484","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9761484","citation_suggestion":"Patentable. \"Interconnect structure and fabrication thereof\" (US-9761484). https://patentable.app/patents/US-9761484","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9761484","json":"https://patentable.app/api/llm-context/US-9761484","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:51:52.220Z"}