{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9761493","patent":{"patent_number":"US-9761493","title":"Thin epitaxial silicon carbide wafer fabrication","assignee":null,"inventors":[],"filing_date":"2014-01-24T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":21,"abstract":"Techniques for fabricating thin epitaxial SiC device wafers are described. A bulk SiC wafer is used to provide a seed layer of a thin layer of SiC for epitaxially growing SiC. The seed layer is exfoliated from the bulk SiC after bonding the bulk SiC to a handle substrate. The bulk SiC wafer from which the thin layer of SiC is exfoliated may be re-used in fabricating subsequent thin film epitaxial SiC wafers. After growing epitaxial SiC from the seed layer on the handle substrate, devices may be fabricated in the epitaxial SiC and the handle substrate can be removed. The handle substrate can be re-used in fabricating subsequent thin film epitaxial SiC wafers. The epitaxial SiC can be cut into dies and packaged as an SiC chip or bonded to another substrate, such as a silicon substrate with devices formed thereon."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Thin epitaxial silicon carbide wafer fabrication","description":"Techniques for fabricating thin epitaxial SiC device wafers are described. A bulk SiC wafer is used to provide a seed layer of a thin layer of SiC for epitaxially growing SiC. The seed layer is exfoli","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9761493","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9761493","citation_suggestion":"Patentable. \"Thin epitaxial silicon carbide wafer fabrication\" (US-9761493). https://patentable.app/patents/US-9761493","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9761493","json":"https://patentable.app/api/llm-context/US-9761493","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:35:40.187Z"}