{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9761496","patent":{"patent_number":"US-9761496","title":"Field effect transistor contacts","assignee":null,"inventors":[],"filing_date":"2015-12-09T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A method comprises forming a first gate of a first field effect transistor (FET) device over a first channel region of a first fin arranged on a substrate, forming a second gate of a second FET device over a second channel region of a second fin arranged on the substrate, the second channel region having a width that is greater than a width of the first channel region, etching to remove portions of the insulator material and define a first cavity that exposes an active region of the first FET device and a second cavity that exposes an active region of the second FET device, and depositing a conductive material in the first cavity to define a first contact and depositing a conductive material in the second cavity to define a second contact, the second contact having a width that is greater than a width of the first contact."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Field effect transistor contacts","description":"A method comprises forming a first gate of a first field effect transistor (FET) device over a first channel region of a first fin arranged on a substrate, forming a second gate of a second FET device","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9761496","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9761496","citation_suggestion":"Patentable. \"Field effect transistor contacts\" (US-9761496). https://patentable.app/patents/US-9761496","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9761496","json":"https://patentable.app/api/llm-context/US-9761496","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:58:39.384Z"}