{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9761509","patent":{"patent_number":"US-9761509","title":"Semiconductor device with throgh-substrate via and method for fabrication the semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-12-29T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"A method for is used for forming a semiconductor device having a through-substrate via. The method includes providing a preliminary structure having an ILD layer on a substrate and a buffer layer on the ILD layer; forming an opening through the buffer layer, the ILD layer, and the substrate; forming a liner structure layer over the substrate, wherein an exposed surface of the opening is covered by the liner structure layer; depositing a conductive material over the substrate to fill the opening; performing a polishing process, to polish over the substrate and stop at the buffer layer, wherein the liner structure layer and the conductive material remaining in the opening form a conductive via; performing an etching back process, to remove the buffer layer and expose the ILD layer, wherein a top portion of the conductive via is also exposed and higher than the ILD layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with throgh-substrate via and method for fabrication the semiconductor device","description":"A method for is used for forming a semiconductor device having a through-substrate via. The method includes providing a preliminary structure having an ILD layer on a substrate and a buffer layer on t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9761509","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9761509","citation_suggestion":"Patentable. \"Semiconductor device with throgh-substrate via and method for fabrication the semiconductor device\" (US-9761509). https://patentable.app/patents/US-9761509","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9761509","json":"https://patentable.app/api/llm-context/US-9761509","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:15:03.844Z"}