{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9761531","patent":{"patent_number":"US-9761531","title":"Semiconductor device and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2015-09-01T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"According to one embodiment, a semiconductor device is disclosed. The device includes interconnects each including a catalyst layer and a graphene layer thereon. The catalyst layer includes a first to fifth catalyst regions arranged along a first direction in order of the first to fifth catalyst regions. The first, third and fifth catalyst regions include upper surfaces higher than those of the second and fourth catalyst regions. Adjacent ones of the first to fifth catalyst regions are in contact with each other. A distance between the first and the third catalyst region and a distance between the third and fifth catalyst region are greater than a mean free path of graphene. The graphene layer includes a first graphene layer on the second catalyst region and a second graphene layer on the fourth catalyst region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing the same","description":"According to one embodiment, a semiconductor device is disclosed. The device includes interconnects each including a catalyst layer and a graphene layer thereon. The catalyst layer includes a first to","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9761531","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9761531","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing the same\" (US-9761531). https://patentable.app/patents/US-9761531","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9761531","json":"https://patentable.app/api/llm-context/US-9761531","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:58:31.135Z"}