{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9761549","patent":{"patent_number":"US-9761549","title":"Semiconductor device and fabrication method","assignee":null,"inventors":[],"filing_date":"2013-11-07T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":3,"abstract":"Semiconductor devices and methods are provided. The semiconductor device can include a semiconductor substrate, a plurality of solder pads disposed on the semiconductor substrate, a first insulating layer disposed over the semiconductor substrate, a columnar electrode disposed over the solder pad, and a solder ball disposed on the columnar electrode. The first insulating layer can include a first opening to expose a solder pad of the plurality of solder pads. The columnar electrode can include a bulk material and a through hole in the bulk material. The through hole can expose at least a surface portion of the solder pad. The solder ball can include a convex metal head on a top surface of the bulk material of the columnar electrode, and a filling part filled in the through hole."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and fabrication method","description":"Semiconductor devices and methods are provided. The semiconductor device can include a semiconductor substrate, a plurality of solder pads disposed on the semiconductor substrate, a first insulating l","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9761549","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9761549","citation_suggestion":"Patentable. \"Semiconductor device and fabrication method\" (US-9761549). https://patentable.app/patents/US-9761549","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9761549","json":"https://patentable.app/api/llm-context/US-9761549","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:19:29.653Z"}