{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9761581","patent":{"patent_number":"US-9761581","title":"Single mask level including a resistor and a through-gate implant","assignee":null,"inventors":[],"filing_date":"2016-03-03T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":12,"abstract":"A method of forming an IC includes providing a field dielectric in a portion of a semiconductor surface, a bipolar or Schottky diode (BSD) class device area, a CMOS transistor area, and a resistor area. A polysilicon layer is deposited to provide a polysilicon gate area for MOS transistors in the CMOS transistor area, over the BSD class device area, and over the field dielectric for providing a polysilicon resistor in the resistor area. A first mask pattern is formed on the polysilicon layer. Using the first mask pattern, first implanting (I1) of the polysilicon resistor providing a first projected range (RP1)<a thickness of the polysilicon layer and second implanting (I2) providing a second RP (RP2), where RP2>RP1. I2 provides a CMOS implant into the semiconductor surface layer in the CMOS transistor area and/or a BSD implant into the semiconductor surface layer in the BSD area."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Single mask level including a resistor and a through-gate implant","description":"A method of forming an IC includes providing a field dielectric in a portion of a semiconductor surface, a bipolar or Schottky diode (BSD) class device area, a CMOS transistor area, and a resistor are","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9761581","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9761581","citation_suggestion":"Patentable. \"Single mask level including a resistor and a through-gate implant\" (US-9761581). https://patentable.app/patents/US-9761581","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9761581","json":"https://patentable.app/api/llm-context/US-9761581","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:53:59.825Z"}