{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9761587","patent":{"patent_number":"US-9761587","title":"Tall strained high percentage silicon germanium fins for CMOS","assignee":null,"inventors":[],"filing_date":"2016-11-04T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A silicon germanium alloy (SiGe) fin having a first germanium content is provided within first and second device regions. Each SiGe fin is located on a sacrificial material stack and an oxide material surrounds each SiGe fin. A germanium layer is formed atop each SiGe fin within one of the device regions, while a SiGe layer having a second germanium content less than the first germanium content is formed atop each SiGe fin within the other device region. An exposed surface of each of the germanium layer and the SiGe layer is then bonded to a base substrate. The sacrificial material stack is removed and thereafter the oxide material is recessed to expose a portion of each SiGe fin in the first and second device regions. Each SiGe fin contacting the germanium layer compressively strained, and each SiGe fin contacting the SiGe layer is tensely strained."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Tall strained high percentage silicon germanium fins for CMOS","description":"A silicon germanium alloy (SiGe) fin having a first germanium content is provided within first and second device regions. Each SiGe fin is located on a sacrificial material stack and an oxide material","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9761587","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9761587","citation_suggestion":"Patentable. \"Tall strained high percentage silicon germanium fins for CMOS\" (US-9761587). https://patentable.app/patents/US-9761587","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9761587","json":"https://patentable.app/api/llm-context/US-9761587","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:55:31.589Z"}