{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9761608","patent":{"patent_number":"US-9761608","title":"Lateral bipolar junction transistor with multiple base lengths","assignee":null,"inventors":[],"filing_date":"2016-08-15T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A method comprises forming shallow trenches in an intrinsic base semiconductor layer and forming a first base layer thereon; applying a first mask to the layer; etching the first base layer; forming a second base layer on the intrinsic base semiconductor layer adjacent the first base layer; removing the first mask; applying a second mask to the base layers; simultaneously etching the layers to produce extrinsic bases of reduced cross dimensions; disposing spacers on the extrinsic bases; etching around the bases leaving the intrinsic base semiconductor layer under the bases and spacers; implanting ions into sides of the intrinsic base semiconductor layer under the first extrinsic base to form a first emitter/collector junction and into sides of the intrinsic base semiconductor layer under the second extrinsic base to form a second emitter/collector junction; depositing semiconductor material adjacent to the junctions and the trenches; and removing the applied second mask."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Lateral bipolar junction transistor with multiple base lengths","description":"A method comprises forming shallow trenches in an intrinsic base semiconductor layer and forming a first base layer thereon; applying a first mask to the layer; etching the first base layer; forming a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9761608","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9761608","citation_suggestion":"Patentable. \"Lateral bipolar junction transistor with multiple base lengths\" (US-9761608). https://patentable.app/patents/US-9761608","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9761608","json":"https://patentable.app/api/llm-context/US-9761608","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:14:11.065Z"}