{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9761610","patent":{"patent_number":"US-9761610","title":"Strain release in PFET regions","assignee":null,"inventors":[],"filing_date":"2016-08-22T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":14,"abstract":"A method for fabricating a semiconductor device, includes providing a strained silicon on insulator (SSOI) structure, the SSOI structure comprises, a dielectric layer disposed on a substrate, a silicon germanium layer disposed on the dielectric layer, and a strained semiconductor material layer disposed directly on the silicon germanium layer, forming a plurality of fins on the SSOI structure, forming a gate structure over a portion of at least one fin in a nFET region, forming a gate structure over a portion of at least one fin in a pFET region, removing the gate structure over the portion of the at least one fin in the pFET region, removing the silicon germanium layer exposed by the removing, and forming a new gate structure over the portion of the at least one fin in the pFET region, such that the new gate structure surrounds the portion on all four sides."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Strain release in PFET regions","description":"A method for fabricating a semiconductor device, includes providing a strained silicon on insulator (SSOI) structure, the SSOI structure comprises, a dielectric layer disposed on a substrate, a silico","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9761610","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9761610","citation_suggestion":"Patentable. \"Strain release in PFET regions\" (US-9761610). https://patentable.app/patents/US-9761610","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9761610","json":"https://patentable.app/api/llm-context/US-9761610","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:51:48.168Z"}