{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9761663","patent":{"patent_number":"US-9761663","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-07-27T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A semiconductor device that includes a plurality of trench gate structures each having a gate electrode extending in a depth direction of an element, the plurality of trench gate structures including first trench gate structures respectively contributing to control of the element and second trench gate structures respectively not contributing to the control of the element, the semiconductor device including an electrode portion having a potential other than a gate potential, and an electrode pad that is disposed on a front face of a semiconductor substrate, wherein the electrode pad is used as a terminal to apply a predetermined voltage to gate insulator films, in screening that is executed by applying the predetermined voltage to the gate insulator films respectively in contact with the gate electrode connected to the electrode pad and that is executed before the electrode pad is short-circuited to the electrode portion."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"A semiconductor device that includes a plurality of trench gate structures each having a gate electrode extending in a depth direction of an element, the plurality of trench gate structures including ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9761663","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9761663","citation_suggestion":"Patentable. \"Semiconductor device\" (US-9761663). https://patentable.app/patents/US-9761663","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9761663","json":"https://patentable.app/api/llm-context/US-9761663","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:17:52.994Z"}