{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9761686","patent":{"patent_number":"US-9761686","title":"Semiconductor wafer, method of producing semiconductor wafer, and heterojunction bipolar transistor","assignee":null,"inventors":[],"filing_date":"2016-06-20T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"Techniques are provided that can impart sufficient electrical conductivity to a semiconductor crystal exhibiting low doping efficiency for silicon atoms, such as InGaAs, by implanting only a small amount of silicon atoms. Such a semiconductor wafer may include a first semiconductor crystal layer, a second semiconductor crystal layer exhibiting a conductivity type that is different from the first layer, a third semiconductor crystal layer exhibiting the conductivity type of the first layer and having a larger band gap than the second semiconductor crystal layer, and a fourth semiconductor crystal layer exhibiting the conductivity type of the first layer and having a smaller band gap than the third semiconductor crystal layer. The fourth semiconductor crystal layer contains a first element that generates a first carrier of a corresponding conductivity type and a second element that generates a second carrier of a corresponding conductivity type."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor wafer, method of producing semiconductor wafer, and heterojunction bipolar transistor","description":"Techniques are provided that can impart sufficient electrical conductivity to a semiconductor crystal exhibiting low doping efficiency for silicon atoms, such as InGaAs, by implanting only a small amo","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9761686","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9761686","citation_suggestion":"Patentable. \"Semiconductor wafer, method of producing semiconductor wafer, and heterojunction bipolar transistor\" (US-9761686). https://patentable.app/patents/US-9761686","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9761686","json":"https://patentable.app/api/llm-context/US-9761686","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:17:07.884Z"}