{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9761687","patent":{"patent_number":"US-9761687","title":"Method of forming gate dielectric layer for MOS transistor","assignee":null,"inventors":[],"filing_date":"2015-01-04T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"A method of forming a gate dielectric layer for a MOS transistor includes the following steps. A gate dielectric layer is formed on a substrate. A nitridation process is performed on the gate dielectric layer. A multi-step post nitridation annealing process including two oxygen-containing annealing steps with different respective annealing temperatures is performed on the gate dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming gate dielectric layer for MOS transistor","description":"A method of forming a gate dielectric layer for a MOS transistor includes the following steps. A gate dielectric layer is formed on a substrate. A nitridation process is performed on the gate dielectr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9761687","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9761687","citation_suggestion":"Patentable. \"Method of forming gate dielectric layer for MOS transistor\" (US-9761687). https://patentable.app/patents/US-9761687","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9761687","json":"https://patentable.app/api/llm-context/US-9761687","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:26:00.388Z"}