{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9761689","patent":{"patent_number":"US-9761689","title":"Method of forming a semiconductor device and according semiconductor device","assignee":null,"inventors":[],"filing_date":"2014-09-12T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"The present disclosure provides a method of forming a semiconductor device, including a shaping of a gate structure of the semiconductor device such that a spacer removal after silicide formation is avoided and silicide overhang is suppressed. In some aspects of the present disclosure, a method of forming a semiconductor device is provided wherein a gate structure is provided over an active region of a semiconductor substrate, the gate structure including a gate electrode material and sidewall spacers. At least one of the gate electrode material and the sidewall spacers are shaped by applying a shaping process to the gate structure and a silicide portion is formed on the shaped gate structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming a semiconductor device and according semiconductor device","description":"The present disclosure provides a method of forming a semiconductor device, including a shaping of a gate structure of the semiconductor device such that a spacer removal after silicide formation is a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9761689","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9761689","citation_suggestion":"Patentable. \"Method of forming a semiconductor device and according semiconductor device\" (US-9761689). https://patentable.app/patents/US-9761689","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9761689","json":"https://patentable.app/api/llm-context/US-9761689","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:35:30.757Z"}