{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9761694","patent":{"patent_number":"US-9761694","title":"Vertical FET with selective atomic layer deposition gate","assignee":null,"inventors":[],"filing_date":"2016-01-27T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"Vertical channel field effect transistors and methods of forming the same include forming one or more vertical channels on a bottom source/drain layer. A seed layer is deposited on horizontal surfaces around the one or more vertical channels. A metal gate is deposited on the seed layer. A top source/drain layer is deposited above the one or more vertical channels and the metal gate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical FET with selective atomic layer deposition gate","description":"Vertical channel field effect transistors and methods of forming the same include forming one or more vertical channels on a bottom source/drain layer. A seed layer is deposited on horizontal surfaces","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9761694","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9761694","citation_suggestion":"Patentable. \"Vertical FET with selective atomic layer deposition gate\" (US-9761694). https://patentable.app/patents/US-9761694","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9761694","json":"https://patentable.app/api/llm-context/US-9761694","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T17:23:07.297Z"}