{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9761695","patent":{"patent_number":"US-9761695","title":"Method for fabricating a shield gate trench MOSFET","assignee":null,"inventors":[],"filing_date":"2016-11-29T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A method for fabricating a shield gate trench MOSFET, including the following steps: forming a hard mask layer and defining a gate forming region; forming a top trench by means of both anisotropic and isotropic etching; forming an oxidative barrier layer; etching back the oxidative barrier layer, and then forming a bottom trench by means of anisotropic etching; forming a bottom oxidative layer by means of thermal oxidative self-alignment; removing the oxidative barrier layer; forming a gate dielectric film; forming a first polysilicon layer; etching back the first polysilicon layer to form respectively therefrom a polysilicon gate and a bottom shield polysilicon; forming a inter-poly dielectric isolation layer; etching back the inter-poly dielectric isolation layer; forming a second polysilicon layer and forming a shield polysilicon by means of superposition with the bottom shield polysilicon."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating a shield gate trench MOSFET","description":"A method for fabricating a shield gate trench MOSFET, including the following steps: forming a hard mask layer and defining a gate forming region; forming a top trench by means of both anisotropic and","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9761695","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9761695","citation_suggestion":"Patentable. \"Method for fabricating a shield gate trench MOSFET\" (US-9761695). https://patentable.app/patents/US-9761695","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9761695","json":"https://patentable.app/api/llm-context/US-9761695","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:26:23.481Z"}