{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9761698","patent":{"patent_number":"US-9761698","title":"Air gap contact formation for reducing parasitic capacitance","assignee":null,"inventors":[],"filing_date":"2016-10-14T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A functional gate structure is located on a surface of a semiconductor material portion and including a U-shaped gate dielectric portion and a gate conductor portion. A source region is located on one side of the functional gate structure, and a drain region is located on another side of the functional gate structure. The source region and drain region both have a topmost surface that is above a topmost surface of the semiconductor material portion and another surface that touches a portion of the U-shaped gate dielectric. A contact structure is located on the topmost surface of the source region and/or the drain region. A middle-of-the-line air gap contact is located between the contact structure and the functional gate structure and above at least one of the source region and the drain region. The middle-of-the-line air gap contact is sealed by a portion of a conformal dielectric material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Air gap contact formation for reducing parasitic capacitance","description":"A functional gate structure is located on a surface of a semiconductor material portion and including a U-shaped gate dielectric portion and a gate conductor portion. A source region is located on one","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9761698","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9761698","citation_suggestion":"Patentable. \"Air gap contact formation for reducing parasitic capacitance\" (US-9761698). https://patentable.app/patents/US-9761698","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9761698","json":"https://patentable.app/api/llm-context/US-9761698","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:26:09.821Z"}