{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9761716","patent":{"patent_number":"US-9761716","title":"Semiconductor device and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2015-10-15T00:00:00.000Z","publication_date":"2017-09-12T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":17,"abstract":"The present disclosure provides semiconductor devices and fabrication methods thereof. A stacked substrate includes an insulating layer between a substrate and a semiconductor layer. First openings are formed in the semiconductor layer to define a first distance between adjacent sidewalls of adjacent first openings. Spacers are formed on sidewall surfaces of each first opening. Second openings corresponding to the first openings are formed through the insulating layer and into the substrate. The sidewall surfaces of the substrate in the second openings are etched to define a second distance between adjacent substrate sidewalls of adjacent etched second openings. The second distance is shorter than the first distance. An isolation layer is formed in the first and second openings. Conductive structures are formed on the semiconductor layer on both sides of a gate structure formed on the semiconductor layer. The conductive structures penetrate through the isolation layer and into the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and fabrication method thereof","description":"The present disclosure provides semiconductor devices and fabrication methods thereof. A stacked substrate includes an insulating layer between a substrate and a semiconductor layer. First openings ar","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9761716","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9761716","citation_suggestion":"Patentable. \"Semiconductor device and fabrication method thereof\" (US-9761716). https://patentable.app/patents/US-9761716","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9761716","json":"https://patentable.app/api/llm-context/US-9761716","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:53:18.808Z"}