{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9767879","patent":{"patent_number":"US-9767879","title":"Setting of reference voltage for data sensing in ferroelectric memories","assignee":null,"inventors":[],"filing_date":"2016-02-09T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":22,"abstract":"A method of setting the reference voltage for sensing data states in integrated circuits including ferroelectric random access memory (FRAM) cells of the one-transistor-one capacitor (1T-1C) type. In an electrical test operation, some or all of the FRAM cells are programmed to a particular polarization state. A “shmoo” of the reference voltage for sensing the data state is performed, at one or more worst case electrical or environmental conditions for that data state, to determine a reference voltage limit at which the weakest cell fails to return the correct data when read. A configuration register is then written with a reference voltage based on this reference voltage limit, for example at the limit plus/minus a tolerance."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Setting of reference voltage for data sensing in ferroelectric memories","description":"A method of setting the reference voltage for sensing data states in integrated circuits including ferroelectric random access memory (FRAM) cells of the one-transistor-one capacitor (1T-1C) type. In ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9767879","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9767879","citation_suggestion":"Patentable. \"Setting of reference voltage for data sensing in ferroelectric memories\" (US-9767879). https://patentable.app/patents/US-9767879","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9767879","json":"https://patentable.app/api/llm-context/US-9767879","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:18:26.032Z"}