{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9767880","patent":{"patent_number":"US-9767880","title":"Ferroelectric memory cell apparatuses and methods of operating ferroelectric memory cells","assignee":null,"inventors":[],"filing_date":"2016-03-16T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":19,"abstract":"Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. Prior to writing a logic value to a ferroelectric memory cell, a digit line of a ferroelectric memory cell may be biased to a first voltage, and a cell plate of the ferroelectric memory cell may be biased to a second voltage. A magnitude of a difference between the first voltage and the second voltage may be greater than a magnitude of a write voltage for the first ferroelectric memory cell. The magnitude of the difference between the first voltage and the second voltage may decrease the time to reach a write voltage for the ferroelectric memory cell. Several example cell plate drivers are also disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Ferroelectric memory cell apparatuses and methods of operating ferroelectric memory cells","description":"Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. Prior to writing a logic value to a ferroelectric memory cell, a digit line of a ferroelectric memory ce","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9767880","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9767880","citation_suggestion":"Patentable. \"Ferroelectric memory cell apparatuses and methods of operating ferroelectric memory cells\" (US-9767880). https://patentable.app/patents/US-9767880","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9767880","json":"https://patentable.app/api/llm-context/US-9767880","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:18:31.883Z"}