{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9767908","patent":{"patent_number":"US-9767908","title":"Semiconductor memory device that applies an initial pass voltage followed by a final pass voltage to non-selected word lines during a write operation","assignee":null,"inventors":[],"filing_date":"2016-02-26T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A non-volatile semiconductor memory device includes a first memory cell above a substrate and electrically connected to a first word line, a second memory cell above the first memory cell and electrically connected to a second word line, and a controller. The controller is configured to execute a write operation that includes a first step in which a first voltage is applied to a selected word line and to a non-selected word line, a second step after the first step in which a program voltage is applied to the selected word line, and a third step after the second step in which a second voltage higher than the first voltage is applied to the non-selected word line. A time period between a start of the second step and a start of the third step is different depending on whether the first or second memory cell is being written."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device that applies an initial pass voltage followed by a final pass voltage to non-selected word lines during a write operation","description":"A non-volatile semiconductor memory device includes a first memory cell above a substrate and electrically connected to a first word line, a second memory cell above the first memory cell and electric","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9767908","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9767908","citation_suggestion":"Patentable. \"Semiconductor memory device that applies an initial pass voltage followed by a final pass voltage to non-selected word lines during a write operation\" (US-9767908). https://patentable.app/patents/US-9767908","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9767908","json":"https://patentable.app/api/llm-context/US-9767908","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:52:09.805Z"}