{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9767987","patent":{"patent_number":"US-9767987","title":"Method and system for modifying substrate relief features using ion implantation","assignee":null,"inventors":[],"filing_date":"2014-05-28T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of treating resist features comprises positioning, in a process chamber, a substrate having a set of patterned resist features on a first side of the substrate and generating a plasma in the process chamber having a plasma sheath adjacent to the first side of the substrate. The method may further comprise modifying a shape of a boundary between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the substrate facing the plasma, wherein ions from the plasma impinge on the patterned resist features over a wide angular range during a first exposure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method and system for modifying substrate relief features using ion implantation","description":"A method of treating resist features comprises positioning, in a process chamber, a substrate having a set of patterned resist features on a first side of the substrate and generating a plasma in the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9767987","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9767987","citation_suggestion":"Patentable. \"Method and system for modifying substrate relief features using ion implantation\" (US-9767987). https://patentable.app/patents/US-9767987","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9767987","json":"https://patentable.app/api/llm-context/US-9767987","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T17:46:01.530Z"}