{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9768020","patent":{"patent_number":"US-9768020","title":"Low defect relaxed SiGe/strained Si structures on implant anneal buffer/strain relaxed buffer layers with epitaxial rare earth oxide interlayers and methods to fabricate same","assignee":null,"inventors":[],"filing_date":"2016-09-20T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"A method provides a substrate having a top surface; forming a first semiconductor layer on the top surface, the first semiconductor layer having a first unit cell geometry; epitaxially depositing a layer of a metal-containing oxide on the first semiconductor layer, the layer of metal-containing oxide having a second unit cell geometry that differs from the first unit cell geometry; ion implanting the first semiconductor layer through the layer of metal-containing oxide; annealing the ion implanted first semiconductor layer; and forming a second semiconductor layer on the layer of metal-containing oxide, the second semiconductor layer having the first unit cell geometry. The layer of metal-containing oxide functions to inhibit propagation of misfit dislocations from the first semiconductor layer into the second semiconductor layer. A structure formed by the method is also disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Low defect relaxed SiGe/strained Si structures on implant anneal buffer/strain relaxed buffer layers with epitaxial rare earth oxide interlayers and methods to fabricate same","description":"A method provides a substrate having a top surface; forming a first semiconductor layer on the top surface, the first semiconductor layer having a first unit cell geometry; epitaxially depositing a la","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9768020","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9768020","citation_suggestion":"Patentable. \"Low defect relaxed SiGe/strained Si structures on implant anneal buffer/strain relaxed buffer layers with epitaxial rare earth oxide interlayers and methods to fabricate same\" (US-9768020). https://patentable.app/patents/US-9768020","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9768020","json":"https://patentable.app/api/llm-context/US-9768020","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:19:30.854Z"}