{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9768032","patent":{"patent_number":"US-9768032","title":"Method of forming pattern and method of manufacturing integrated circuit device by using the same","assignee":null,"inventors":[],"filing_date":"2016-03-29T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of forming a pattern including forming a feature layer on a substrate having first and second regions; forming a first guide pattern on the first region, the first guide pattern having openings therein, the openings exposing the feature layer; forming a second guide pattern covering the feature layer exposed through the first guide pattern on the first region and covering the second region; forming a block copolymer layer covering the first guide pattern and the second guide pattern on the first and second regions; phase-separating the block copolymer layer to form first vertical domains and a second vertical domain; removing the first vertical domains on the first region; and etching the first guide pattern and the feature layer using the second vertical domain as an etch mask on the first region to form a feature pattern having holes therein."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming pattern and method of manufacturing integrated circuit device by using the same","description":"A method of forming a pattern including forming a feature layer on a substrate having first and second regions; forming a first guide pattern on the first region, the first guide pattern having openin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9768032","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9768032","citation_suggestion":"Patentable. \"Method of forming pattern and method of manufacturing integrated circuit device by using the same\" (US-9768032). https://patentable.app/patents/US-9768032","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9768032","json":"https://patentable.app/api/llm-context/US-9768032","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:26:23.394Z"}