{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9768062","patent":{"patent_number":"US-9768062","title":"Method for forming low parasitic capacitance source and drain contacts","assignee":null,"inventors":[],"filing_date":"2016-09-26T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for forming a low parasitic capacitance contact to a source-drain structure of a fin field effect transistor device. In some embodiments the method includes etching a long trench down to the source-drain structure, the trench being sufficiently long to extend across all the of source-drain regions of the device. A conductive layer is formed on the source-drain structure, and the trench is filled with a first fill material. A second, narrower trench is opened along a portion of the length of the first trench, and filled with a second fill material. The first fill material may be conductive, and may form the contact. If the first fill material is not conductive, a third trench may be opened, in the portion of the first trench not filled with the second fill material, and filled with a conductive material, to form the contact."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming low parasitic capacitance source and drain contacts","description":"A method for forming a low parasitic capacitance contact to a source-drain structure of a fin field effect transistor device. In some embodiments the method includes etching a long trench down to the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9768062","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9768062","citation_suggestion":"Patentable. \"Method for forming low parasitic capacitance source and drain contacts\" (US-9768062). https://patentable.app/patents/US-9768062","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9768062","json":"https://patentable.app/api/llm-context/US-9768062","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T18:29:08.070Z"}