{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9768064","patent":{"patent_number":"US-9768064","title":"Formation method of semiconductor device structure","assignee":null,"inventors":[],"filing_date":"2016-07-14T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Formation methods of a semiconductor device structure are provided. The method includes providing a substrate having a low topography region and a high low topography region. The method also includes forming a first dielectric layer over the substrate. The method further includes forming a second dielectric layer over the stop layer. In addition, the method includes forming an opening in the first dielectric layer, the stop layer and the second dielectric layer. The method also includes forming a conductive material layer over the second dielectric layer. The conductive material layer fills the opening. The method further includes performing a polishing process over the conductive material layer until a top surface of the stop layer is exposed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Formation method of semiconductor device structure","description":"Formation methods of a semiconductor device structure are provided. The method includes providing a substrate having a low topography region and a high low topography region. The method also includes ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9768064","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9768064","citation_suggestion":"Patentable. \"Formation method of semiconductor device structure\" (US-9768064). https://patentable.app/patents/US-9768064","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9768064","json":"https://patentable.app/api/llm-context/US-9768064","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:19:41.541Z"}