{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9768069","patent":{"patent_number":"US-9768069","title":"Method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-03-15T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":18,"abstract":"A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate with an insulating layer formed thereon. The method includes forming a gate dielectric layer in the first opening and the second opening. The method includes forming a film over the gate dielectric layer. The method includes forming a first work function metal layer in the first opening. The method includes depositing a second work function metal layer in the first opening and the second opening and in direct contact with the first work function metal layer in the first opening and the film in the second opening. A first deposition rate of the second work function metal layer over the first work function metal layer is greater than a second deposition rate of the second work function metal layer over the film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device","description":"A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate with an insulating layer formed thereon. The method includes forming a gate dielectric ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9768069","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9768069","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device\" (US-9768069). https://patentable.app/patents/US-9768069","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9768069","json":"https://patentable.app/api/llm-context/US-9768069","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:14:11.625Z"}