{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9768074","patent":{"patent_number":"US-9768074","title":"Transistor structure and fabrication methods with an epitaxial layer over multiple halo implants","assignee":null,"inventors":[],"filing_date":"2016-03-28T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of forming a transistor can include forming a gate mask on a substrate having a vertical location aligned with that of a transistor control gate; implanting first conductivity type dopants with the gate mask as an implant mask to form a first shallow halo region; implanting first conductivity type dopants with at least the gate mask as an implant mask to form a first deep halo region having a peak dopant concentration profile at a greater substrate depth than the first shallow halo region; forming an epitaxial layer on top of the substrate; forming a first control gate structure on the epitaxial layer; and forming a first source or drain region, of a second conductivity type, in at least the epitaxial layer to a side of the first control gate, and over the first shallow halo region and the first deep halo region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Transistor structure and fabrication methods with an epitaxial layer over multiple halo implants","description":"A method of forming a transistor can include forming a gate mask on a substrate having a vertical location aligned with that of a transistor control gate; implanting first conductivity type dopants wi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9768074","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9768074","citation_suggestion":"Patentable. \"Transistor structure and fabrication methods with an epitaxial layer over multiple halo implants\" (US-9768074). https://patentable.app/patents/US-9768074","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9768074","json":"https://patentable.app/api/llm-context/US-9768074","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:19:33.210Z"}