{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9768075","patent":{"patent_number":"US-9768075","title":"Method and structure to enable dual channel fin critical dimension control","assignee":null,"inventors":[],"filing_date":"2016-06-20T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":18,"abstract":"A method for manufacturing a semiconductor device includes forming a first semiconductor layer on a substrate having a {100} crystallographic surface orientation, forming a second semiconductor layer on the substrate, patterning the first semiconductor layer and the second semiconductor layer into a first plurality of fins and a second plurality of fins, respectively, wherein the first and second plurality of fins extend vertically with respect to the substrate, covering the first plurality of fins and a portion of the substrate corresponding to the first plurality of fins, and epitaxially growing semiconductor layers on exposed portions of the second plurality of fins and on exposed portions of the substrate, wherein the epitaxially grown semiconductor layers on the exposed portions of the second plurality of fins increase a critical dimension of each of the second plurality of fins."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method and structure to enable dual channel fin critical dimension control","description":"A method for manufacturing a semiconductor device includes forming a first semiconductor layer on a substrate having a {100} crystallographic surface orientation, forming a second semiconductor layer ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9768075","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9768075","citation_suggestion":"Patentable. \"Method and structure to enable dual channel fin critical dimension control\" (US-9768075). https://patentable.app/patents/US-9768075","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9768075","json":"https://patentable.app/api/llm-context/US-9768075","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:26:20.389Z"}