{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9768100","patent":{"patent_number":"US-9768100","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-08-24T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a first conductive layer with first and second sections separated in a first direction. A first chip is on the first section and has a first, second and third electrodes. A second chip is on the second section and has a fourth and fifth electrode. A second conductive layer is between the sections of the first conductive layer in the first direction. The second conductive layer has a first connected section to which the second electrode is connected, a second connected section to which to the fifth electrode is connected, and a first clearance portion between the first and second connected sections in the first direction. A third conductive layer is spaced from the first conductive layer and the second conductive layer and is connected to the third electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"A semiconductor device includes a first conductive layer with first and second sections separated in a first direction. A first chip is on the first section and has a first, second and third electrode","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9768100","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9768100","citation_suggestion":"Patentable. \"Semiconductor device\" (US-9768100). https://patentable.app/patents/US-9768100","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9768100","json":"https://patentable.app/api/llm-context/US-9768100","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:39:35.794Z"}